As part of the research building "Center for boundary-dominated high performance materials" (ZGH) has a modern analytical scanning electron microscope for numerous research projects (SEM) to be procured with EDX, WDX and EBSD. The SEM is needed for basic characterization of material surfaces and in particular for the chemical and crystallographic pre-characterization of larger sample surface areas. The chemical characterization via EDX for quick analysis and WDX for precise determination of the chemical composition. Crystallographic statements occurring phases secretions, but also the texture and type of grain boundaries are determined by EBSD. Thus can be made to the microstructure statistically verified statements. Particularly interesting sample areas can be identified that can be analyzed in more detail with the highest resolution methods of ZGH, TEM and 3D ATP.
As part of the research building "Center for interface-dominated high performance materials" (ZGH) the following four cleanroom equipment is required:Advanced Silicon Etching (ASE)), Plasma Enhanced Chemical Vapor Deposition (PECVD)), Reactive Ion beam etching (RIBE)) and Reactive Ion Etching (RIE)). This process is obtained even smoother wall profiles. Herewith one has the possibility to adjust both compressive and tensile stresses in the layers and so that they produce stress optimized. During the Reaktivgasätzen many of these parameters are interdependent, can be in the RIBE technique by setting the separate parameters processes customize and thus allow a defined process control and optimization. but selectivity) are also alternative etching masks realized.
The aberration-corrected TEM has both spatial resolution (HR-TEM, energy-filtered imaging and HR-STEM with atomic number contrast) and chemical information (EDX and EELS) provide at the atomic level, together with classical inflections, for the widest possible characterization of interfaces.
Because of this requirement profile results in the necessity of an aberration-corrected TEM for the raster mode, equipped with a so-called. STEM Cs corrector, through which a very small beam diameter can be adjusted, along with the largest possible beam current in the focused electron beam over a field emitter with an efficient way EDX system that covers a large solid angle range.
Additional crystallographic information of ultra-fine-grained and nanokistallinen materials such as type of grain boundaries, grain orientations, rotation angle and texture should be determined on an automated orientation illustration with a ASTAR System of Nano Megas. the aberration-corrected TEM is completed with tomography holder for 3D imaging of precipitates or spatial arrangement of dislocations.